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2N2907 PNP Bipolar Junction Transistor (TO-18)-Pack of 5
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The 2N2907 is a general-purpose PNP Bipolar Junction Transistor (BJT) designed for low-power switching and amplification applications. Packaged in a TO-18 metal can, it is suitable for through-hole mounting and is widely used in consumer electronics, industrial equipment, educational projects, and general-purpose electronic circuit designs.
The transistor supports a collector-emitter voltage (VCEO) of 40V and a maximum collector current of 600mA, making it suitable for signal switching, driver circuits, and analog amplification. It also offers a transition frequency of 200MHz and a minimum DC current gain (hFE) of 100, providing dependable performance across a variety of low-power electronic applications.
Designed for reliable operation, the 2N2907 features a maximum power dissipation of 400mW and is commonly used as the complementary PNP transistor to the 2N2222 in amplifier and switching circuits. Its through-hole TO-18 package allows easy installation, soldering, and replacement during prototype development and production assembly.
| Specification | Details |
|---|---|
| Product Name | 2N2907 Transistor |
| Transistor Type | PNP Bipolar Junction Transistor (BJT) |
| Package | TO-18 |
| Collector-Emitter Voltage (VCEO) | 40V |
| Collector-Base Voltage (VCBO) | 60V |
| Emitter-Base Voltage (VEBO) | 5V |
| Collector Current (IC) | 600mA |
| Power Dissipation (PD) | 400mW |
| Transition Frequency (fT) | 200MHz |
| DC Current Gain (hFE) | 100 (minimum) |
| Mounting Type | Through Hole |